半导体

资料下载：材料科学（半导体材料）

• Application note: Photocurrent measurements on the inVia™ confocal Raman microscope [en]

  When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

  

  Application note: Photocurrent measurements on the inVia™ confocal Raman microscope

  When light interacts with semiconducting materials it can induce electrical currents (‘photocurrents’). These currents carry information about the electronic, optical, and charge transport properties of the material. This information is complementary to that obtainable from Raman scattering, which can identify physical changes in the material properties. This application note demonstrates the capability to simultaneously collect Raman and photocurrent data using the photocurrent mapping module concurrently with an inVia Raman microscope.

  [1.6MB]
• Application note: Analyse compound semiconductors with the inVia™ Raman microscope [en]

  Over the last decade compound semiconductors have attracted a great deal of attention because they offer properties suitable for next generation devices in a wide range of application areas. Historically, the fabrication of these devices has been hindered by material challenges. While these have mainly been conquered at the research level, problems still persist when scaling up to industrial production. Renishaw’s inVia Raman microscope is a non-invasive, non-destructive characterisation tool which provides sub-micrometre information on the vibrational, crystal and electronic structure of materials.

  

  Application note: Analyse compound semiconductors with the inVia™ Raman microscope

  Over the last decade compound semiconductors have attracted a great deal of attention because they offer properties suitable for next generation devices in a wide range of application areas. Historically, the fabrication of these devices has been hindered by material challenges. While these have mainly been conquered at the research level, problems still persist when scaling up to industrial production. Renishaw’s inVia Raman microscope is a non-invasive, non-destructive characterisation tool which provides sub-micrometre information on the vibrational, crystal and electronic structure of materials.

  [612kB]
• Application note: Analyse silicon carbide (SiC) with the inVia Raman microscope [en]

  The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. Manufacturers of silicon carbide raw material and devices need to monitor and control these attributes to enhance yield. The first step in controlling these parameters is to measure them repeatably and quantifiably. Renishaw’s Raman systems are ideal for this.

  

  Application note: Analyse silicon carbide (SiC) with the inVia Raman microscope

  The properties of silicon carbide are highly dependent on its crystal structure (it can exist in many polytypes), on the quality of the crystal, and on the number and types of defects present. Manufacturers of silicon carbide raw material and devices need to monitor and control these attributes to enhance yield. The first step in controlling these parameters is to measure them repeatably and quantifiably. Renishaw’s Raman systems are ideal for this.

  [521kB]
• News release: Identifying imperfections with Raman spectroscopy [en]

  An article in Compound Semiconductor magazine, October 2015, describes how Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour.

  

  News release: Identifying imperfections with Raman spectroscopy

  An article in Compound Semiconductor magazine, October 2015, describes how Raman spectroscopy allows routine mapping of SiC wafers in little more than an hour.

  [2.2MB]